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Please use this identifier to cite or link to this item: https://ir.iimcal.ac.in:8443/jspui/handle/123456789/1582
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dc.contributor.authorGupta, Partha Sarathi
dc.contributor.authorRahaman, Hafizur
dc.contributor.authorKanungo, Sayan
dc.contributor.authorDasgupta, Partha Sarathi
dc.date.accessioned2021-08-26T06:23:38Z-
dc.date.available2021-08-26T06:23:38Z-
dc.date.issued2012
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84861208481&doi=10.1109%2fICDCSyst.2012.6188680&partnerID=40&md5=412bc6b1780cc2af7afd208881a6ca63
dc.identifier.urihttps://ir.iimcal.ac.in:8443/jspui/handle/123456789/1582-
dc.descriptionGupta, Partha Sarathi, School of VLSI Technology, Bengal Engineering and Science University, Kolkata, India; Rahaman, Hafizur, School of VLSI Technology, Bengal Engineering and Science University, Kolkata, India; Kanungo, Sayan, School of VLSI Technology, Bengal Engineering and Science University, Kolkata, India; Dasgupta, Partha Sarathi, Indian Institute of Management, Calcutta, Kolkata, India
dc.descriptionISSN/ISBN - 978-145771545-7
dc.descriptionpp.89-93
dc.descriptionDOI - 10.1109/ICDCSyst.2012.6188680
dc.description.abstractThis paper presents a thorough simulation study on the various drive current improvement schemes on Double Gated Tunneling Field Effect Transistor. It also presents a band-gap engineering technique in order to increase the on-state current of the device. Qualitative analysis has been provided explaining the effect of these techniques on the device characteristics. © 2012 IEEE.
dc.publisherSCOPUS
dc.publisher2012 International Conference on Devices, Circuits and Systems, ICDCS 2012
dc.subjectBand-to-Band Tunelling
dc.subjectTCAD
dc.subjectTFET
dc.titleAnalysis and study of different parameters affecting the I-V characteristics of tunnel-FET transistor
dc.typeConference Paper
Appears in Collections:Management Information Systems

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