Analysis and study of different parameters affecting the I-V characteristics of tunnel-FET transistor

Please use this identifier to cite or link to this item: https://ir.iimcal.ac.in:8443/jspui/handle/123456789/1582

Title:	Analysis and study of different parameters affecting the I-V characteristics of tunnel-FET transistor
Authors:	Gupta, Partha Sarathi Rahaman, Hafizur Kanungo, Sayan Dasgupta, Partha Sarathi
Keywords:	Band-to-Band Tunelling TCAD TFET
Issue Date:	2012
Publisher:	SCOPUS 2012 International Conference on Devices, Circuits and Systems, ICDCS 2012
Abstract:	This paper presents a thorough simulation study on the various drive current improvement schemes on Double Gated Tunneling Field Effect Transistor. It also presents a band-gap engineering technique in order to increase the on-state current of the device. Qualitative analysis has been provided explaining the effect of these techniques on the device characteristics. © 2012 IEEE.
Description:	Gupta, Partha Sarathi, School of VLSI Technology, Bengal Engineering and Science University, Kolkata, India; Rahaman, Hafizur, School of VLSI Technology, Bengal Engineering and Science University, Kolkata, India; Kanungo, Sayan, School of VLSI Technology, Bengal Engineering and Science University, Kolkata, India; Dasgupta, Partha Sarathi, Indian Institute of Management, Calcutta, Kolkata, India ISSN/ISBN - 978-145771545-7 pp.89-93 DOI - 10.1109/ICDCSyst.2012.6188680
URI:	https://www.scopus.com/inward/record.uri?eid=2-s2.0-84861208481&doi=10.1109%2fICDCSyst.2012.6188680&partnerID=40&md5=412bc6b1780cc2af7afd208881a6ca63 https://ir.iimcal.ac.in:8443/jspui/handle/123456789/1582
Appears in Collections:	Management Information Systems

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