Please use this identifier to cite or link to this item: https://ir.iimcal.ac.in:8443/jspui/handle/123456789/1581
Title: A novel design technique for effective SCE control in nano-scaled devices using a buried metal
Authors: Gupta, Partha Sarathi
Kanungo, Sayan
Rahaman, Hafizur
Dasgupta, Partha Sarathi
Keywords: Channel length modulation
DIBL
Short Channel Effects
Sub-threshold conduction
Sub-threshold Swing
Issue Date: 2012
Publisher: SCOPUS
2012 International Conference on Computing, Electronics and Electrical Technologies, ICCEET 2012
Abstract: This paper presents a novel design scheme to reduce the short channel effects effectively in deep sub-micron MOSFET design. This scheme shows excellent improvement in the off-state current and proves to be very effective in controlling channel length modulation in nano-scale device design. This paper also proposes a subsequent theory to explain the effect of the design scheme on device characteristics supported by a through simulation study. © 2012 IEEE.
Description: Gupta, Partha Sarathi, Bengal Engineering and Science University, India; Kanungo, Sayan, Bengal Engineering and Science University, India; Rahaman, Hafizur, Bengal Engineering and Science University, India; Dasgupta, Partha Sarathi, Indian Institute of Management, Calcutta, India
ISSN/ISBN - 978-146730211-1
pp.761-765
DOI - 10.1109/ICCEET.2012.6203784
URI: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84863092415&doi=10.1109%2fICCEET.2012.6203784&partnerID=40&md5=e14e83d2194ba6f63b95e5c1d632e9a6
https://ir.iimcal.ac.in:8443/jspui/handle/123456789/1581
Appears in Collections:Management Information Systems

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