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Please use this identifier to cite or link to this item: https://ir.iimcal.ac.in:8443/jspui/handle/123456789/1581
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dc.contributor.authorGupta, Partha Sarathi
dc.contributor.authorKanungo, Sayan
dc.contributor.authorRahaman, Hafizur
dc.contributor.authorDasgupta, Partha Sarathi
dc.date.accessioned2021-08-26T06:23:38Z-
dc.date.available2021-08-26T06:23:38Z-
dc.date.issued2012
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84863092415&doi=10.1109%2fICCEET.2012.6203784&partnerID=40&md5=e14e83d2194ba6f63b95e5c1d632e9a6
dc.identifier.urihttps://ir.iimcal.ac.in:8443/jspui/handle/123456789/1581-
dc.descriptionGupta, Partha Sarathi, Bengal Engineering and Science University, India; Kanungo, Sayan, Bengal Engineering and Science University, India; Rahaman, Hafizur, Bengal Engineering and Science University, India; Dasgupta, Partha Sarathi, Indian Institute of Management, Calcutta, India
dc.descriptionISSN/ISBN - 978-146730211-1
dc.descriptionpp.761-765
dc.descriptionDOI - 10.1109/ICCEET.2012.6203784
dc.description.abstractThis paper presents a novel design scheme to reduce the short channel effects effectively in deep sub-micron MOSFET design. This scheme shows excellent improvement in the off-state current and proves to be very effective in controlling channel length modulation in nano-scale device design. This paper also proposes a subsequent theory to explain the effect of the design scheme on device characteristics supported by a through simulation study. © 2012 IEEE.
dc.publisherSCOPUS
dc.publisher2012 International Conference on Computing, Electronics and Electrical Technologies, ICCEET 2012
dc.subjectChannel length modulation
dc.subjectDIBL
dc.subjectShort Channel Effects
dc.subjectSub-threshold conduction
dc.subjectSub-threshold Swing
dc.titleA novel design technique for effective SCE control in nano-scaled devices using a buried metal
dc.typeConference Paper
Appears in Collections:Management Information Systems

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