Simulation study of an ultra thin body silicon on insulator tunnel field effect transistor

Please use this identifier to cite or link to this item: https://ir.iimcal.ac.in:8443/jspui/handle/123456789/1579

Title:	Simulation study of an ultra thin body silicon on insulator tunnel field effect transistor
Authors:	Gupta, Partha Sarathi Kanungo, Sayan Rahaman, Hafizur Dasgupta, Partha Sarathi
Keywords:	Band-to-Band Tunneling Sub-threshold Swing UTB-SOI-TFET
Issue Date:	2012
Publisher:	SCOPUS Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
Series/Report no.:	7373 LNCS
Abstract:	This paper presents a modified UTB SOI TFET structure and a thorough simulation study of various device design parameters on this structure. © 2012 Springer-Verlag.
Description:	Gupta, Partha Sarathi, Bengal Engineering and Science University, Howrah, West Bengal, India; Kanungo, Sayan, Bengal Engineering and Science University, Howrah, West Bengal, India; Rahaman, Hafizur, Bengal Engineering and Science University, Howrah, West Bengal, India; Dasgupta, Partha Sarathi, Indian Institute of Management Calcutta, India ISSN/ISBN - 03029743 pp.379-380 DOI - 10.1007/978-3-642-31494-0_51
URI:	https://www.scopus.com/inward/record.uri?eid=2-s2.0-84864313710&doi=10.1007%2f978-3-642-31494-0_51&partnerID=40&md5=b4744d40c0d4386e4b049a67969bcedf https://ir.iimcal.ac.in:8443/jspui/handle/123456789/1579
Appears in Collections:	Management Information Systems

Files in This Item:

There are no files associated with this item.