Please use this identifier to cite or link to this item: https://ir.iimcal.ac.in:8443/jspui/handle/123456789/1579
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dc.contributor.authorGupta, Partha Sarathi
dc.contributor.authorKanungo, Sayan
dc.contributor.authorRahaman, Hafizur
dc.contributor.authorDasgupta, Partha Sarathi
dc.date.accessioned2021-08-26T06:23:38Z-
dc.date.available2021-08-26T06:23:38Z-
dc.date.issued2012
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84864313710&doi=10.1007%2f978-3-642-31494-0_51&partnerID=40&md5=b4744d40c0d4386e4b049a67969bcedf
dc.identifier.urihttps://ir.iimcal.ac.in:8443/jspui/handle/123456789/1579-
dc.descriptionGupta, Partha Sarathi, Bengal Engineering and Science University, Howrah, West Bengal, India; Kanungo, Sayan, Bengal Engineering and Science University, Howrah, West Bengal, India; Rahaman, Hafizur, Bengal Engineering and Science University, Howrah, West Bengal, India; Dasgupta, Partha Sarathi, Indian Institute of Management Calcutta, India
dc.descriptionISSN/ISBN - 03029743
dc.descriptionpp.379-380
dc.descriptionDOI - 10.1007/978-3-642-31494-0_51
dc.description.abstractThis paper presents a modified UTB SOI TFET structure and a thorough simulation study of various device design parameters on this structure. © 2012 Springer-Verlag.
dc.publisherSCOPUS
dc.publisherLecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
dc.relation.ispartofseries7373 LNCS
dc.subjectBand-to-Band Tunneling
dc.subjectSub-threshold Swing
dc.subjectUTB-SOI-TFET
dc.titleSimulation study of an ultra thin body silicon on insulator tunnel field effect transistor
dc.typeConference Paper
Appears in Collections:Management Information Systems

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