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Please use this identifier to cite or link to this item: https://ir.iimcal.ac.in:8443/jspui/handle/123456789/1569
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dc.contributor.authorGupta, Partha Sarathi
dc.contributor.authorBurman, Debasree
dc.contributor.authorDas, Jayita
dc.contributor.authorBrahma, Madhuchhanda
dc.contributor.authorRahaman, Hafizur
dc.contributor.authorDasgupta, Partha Sarathi
dc.date.accessioned2021-08-26T06:23:37Z-
dc.date.available2021-08-26T06:23:37Z-
dc.date.issued2012
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84874407474&doi=10.1109%2fCODIS.2012.6422232&partnerID=40&md5=3a240f200b9c4b3f24ac8b6a5cde837a
dc.identifier.urihttps://ir.iimcal.ac.in:8443/jspui/handle/123456789/1569-
dc.descriptionGupta, Partha Sarathi, Bengal Engineering and Science University, Shibpur, Howrah, India; Burman, Debasree, Bengal Engineering and Science University, Shibpur, Howrah, India; Das, Jayita, Bengal Engineering and Science University, Shibpur, Howrah, India; Brahma, Madhuchhanda, Bengal Engineering and Science University, Shibpur, Howrah, India; Rahaman, Hafizur, Bengal Engineering and Science University, Shibpur, Howrah, India; Dasgupta, Partha Sarathi, Indian Institute of Management, Calcutta, India
dc.descriptionISSN/ISBN - 978-146734698-6
dc.descriptionpp.437-440
dc.descriptionDOI - 10.1109/CODIS.2012.6422232
dc.description.abstractThe Sandwiched Barrier Tunnel FET is a promising device for low power applications. It shows a steep subthreshold slope and a CMOS compatible high ON-STATE current, (Ion). In this paper we present a simulation study to investigate the dependence of key device metrics on various structural parameters. We also present a simple model for the subthreshold current assuming an extreme retrograde doping profile. The assumption made, is justified through simulation results. © 2012 IEEE.
dc.publisherSCOPUS
dc.publisherProceedings of the 2012 International Conference on Communications, Devices and Intelligent Systems, CODIS 2012
dc.subjectBand to Band Tunneling
dc.subjectLow Power
dc.subjectSubthreshold Swing
dc.subjectTCAD
dc.subjectTFET
dc.titlePerformance analysis and simulation study of a Sandwiched Barrier Tunnel FET
dc.typeConference Paper
Appears in Collections:Management Information Systems

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