Please use this identifier to cite or link to this item: https://ir.iimcal.ac.in:8443/jspui/handle/123456789/1569
Title: Performance analysis and simulation study of a Sandwiched Barrier Tunnel FET
Authors: Gupta, Partha Sarathi
Burman, Debasree
Das, Jayita
Brahma, Madhuchhanda
Rahaman, Hafizur
Dasgupta, Partha Sarathi
Keywords: Band to Band Tunneling
Low Power
Subthreshold Swing
TCAD
TFET
Issue Date: 2012
Publisher: SCOPUS
Proceedings of the 2012 International Conference on Communications, Devices and Intelligent Systems, CODIS 2012
Abstract: The Sandwiched Barrier Tunnel FET is a promising device for low power applications. It shows a steep subthreshold slope and a CMOS compatible high ON-STATE current, (Ion). In this paper we present a simulation study to investigate the dependence of key device metrics on various structural parameters. We also present a simple model for the subthreshold current assuming an extreme retrograde doping profile. The assumption made, is justified through simulation results. © 2012 IEEE.
Description: Gupta, Partha Sarathi, Bengal Engineering and Science University, Shibpur, Howrah, India; Burman, Debasree, Bengal Engineering and Science University, Shibpur, Howrah, India; Das, Jayita, Bengal Engineering and Science University, Shibpur, Howrah, India; Brahma, Madhuchhanda, Bengal Engineering and Science University, Shibpur, Howrah, India; Rahaman, Hafizur, Bengal Engineering and Science University, Shibpur, Howrah, India; Dasgupta, Partha Sarathi, Indian Institute of Management, Calcutta, India
ISSN/ISBN - 978-146734698-6
pp.437-440
DOI - 10.1109/CODIS.2012.6422232
URI: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84874407474&doi=10.1109%2fCODIS.2012.6422232&partnerID=40&md5=3a240f200b9c4b3f24ac8b6a5cde837a
https://ir.iimcal.ac.in:8443/jspui/handle/123456789/1569
Appears in Collections:Management Information Systems

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.