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Please use this identifier to cite or link to this item: https://ir.iimcal.ac.in:8443/jspui/handle/123456789/1568
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dc.contributor.authorGupta, Partha Sarathi
dc.contributor.authorJayita
dc.contributor.authorBrahma
dc.contributor.authorBurman, Debasree
dc.contributor.authorDas, Madhuchhanda
dc.contributor.authorRahaman, Hafizur
dc.contributor.authorDasgupta, Partha Sarathi
dc.date.accessioned2021-08-26T06:23:37Z-
dc.date.available2021-08-26T06:23:37Z-
dc.date.issued2012
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84874413924&doi=10.1109%2fCODIS.2012.6422157&partnerID=40&md5=024f21526526176705176ea580f7f63a
dc.identifier.urihttps://ir.iimcal.ac.in:8443/jspui/handle/123456789/1568-
dc.descriptionGupta, Partha Sarathi, Bengal Engineering and Science University, Shibpur, Howrah, India; Burman, Debasree, Bengal Engineering and Science University, Shibpur, Howrah, India; Das, Jayita, Bengal Engineering and Science University, Shibpur, Howrah, India; Brahma, Madhuchhanda, Bengal Engineering and Science University, Shibpur, Howrah, India; Rahaman, Hafizur, Bengal Engineering and Science University, Shibpur, Howrah, India; Dasgupta, Partha Sarathi, Indian Institute of Management, Calcutta, India
dc.descriptionISSN/ISBN - 978-146734698-6
dc.descriptionpp.145-148
dc.descriptionDOI - 10.1109/CODIS.2012.6422157
dc.description.abstractIn this paper we have investigated the effect of asymmetric gate bias on the performance of a double gated TFET structure. We have carried out an extensive simulation study on a recently reported novel electron hole bilayer TFET structure. The structure exhibits a high on current in the range of 50 ?A/?m and the off current remains as low as 10-15 Ampere/?m. So a Ion/Ioff ratio of 10P10 can be achieved. Subthreshold swing has also been reduced to a value of 18mV/decade. The device principle and performance are investigated by 2D numerical simulation. © 2012 IEEE.
dc.publisherSCOPUS
dc.publisherProceedings of the 2012 International Conference on Communications, Devices and Intelligent Systems, CODIS 2012
dc.subjectEHBTFET
dc.subjectSubthreshold swing
dc.subjectTFET
dc.subjectTransfer characteristics
dc.titleAnalytical study of the effect of asymmetric gate bias on the performance of double gate TFET
dc.typeConference Paper
Appears in Collections:Management Information Systems

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