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https://ir.iimcal.ac.in:8443/jspui/handle/123456789/1567| Title: | Modeling the channel potential and threshold voltage of a fully depleted Double Gate Junctionless FET |
| Authors: | Gupta, Partha Sarathi Burman, Debasree Das, Jayita Brahma, Madhuchhanda Rahaman, Hafizur Dasgupta, Partha Sarathi |
| Keywords: | Junctionless FET SCE TCAD Threhold voltage |
| Issue Date: | 2012 |
| Publisher: | SCOPUS Proceedings of the 2012 International Conference on Communications, Devices and Intelligent Systems, CODIS 2012 |
| Abstract: | An analytical model for the 2D potential distribution in sub-threshold regime of operation of a Double Gate Junctionless FET (DG-JL FET) structure is developed. Threshold voltage is computed by computing the minimum value of channel potential. The model predicts the threshold voltage of the device with reasonable accuracy. © 2012 IEEE. |
| Description: | Gupta, Partha Sarathi, Bengal Engineering and Science University, Shibpur, Howrah, India; Burman, Debasree, Bengal Engineering and Science University, Shibpur, Howrah, India; Das, Jayita, Bengal Engineering and Science University, Shibpur, Howrah, India; Brahma, Madhuchhanda, Bengal Engineering and Science University, Shibpur, Howrah, India; Rahaman, Hafizur, Bengal Engineering and Science University, Shibpur, Howrah, India; Dasgupta, Partha Sarathi, Indian Institute of Management, Calcutta, India ISSN/ISBN - 978-146734698-6 pp.149-152 DOI - 10.1109/CODIS.2012.6422158 |
| URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84874417631&doi=10.1109%2fCODIS.2012.6422158&partnerID=40&md5=219a2d16c985025c22cee780c8e17b80 https://ir.iimcal.ac.in:8443/jspui/handle/123456789/1567 |
| Appears in Collections: | Management Information Systems |
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