Please use this identifier to cite or link to this item: https://ir.iimcal.ac.in:8443/jspui/handle/123456789/1564
Title: A detail simulation study on Extended Source Ultra-Thin Body Double-Gated Tunnel FET
Authors: Kanungo, Sayan
Rahaman, Hafizur
Gupta, Partha Sarathi
Dasgupta, Partha Sarathi
Keywords: BTBT
Sub-threshold Swing
TCAD
TFET
Trans-Conductance
Issue Date: 2012
Publisher: SCOPUS
CODEC 2012 - 5th International Conference on Computers and Devices for Communication
Abstract: This work presents an extensive simulation study on different design parameters of an Extended Source Ultra Thin Body Double-Gated Tunneling Field Effect Transistor structure. The study investigates the effects of different device design parameter variations on electrical parameters like: sub-threshold swing, trans-conductance, ON-state current and OFF-state current. Finally an optimum structure for Extended Source Ultra Thin Body Double-Gated Tunneling Field Effect Transistor has been derived from the simulation study, with encouraging results for parameters of interest. © 2012 IEEE.
Description: Kanungo, Sayan, School of VLSI Technology, Bengal Engineering and Science University, Howrah, India; Rahaman, Hafizur, School of VLSI Technology, Bengal Engineering and Science University, Howrah, India; Gupta, Partha Sarathi, School of VLSI Technology, Bengal Engineering and Science University, Howrah, India; Dasgupta, Partha Sarathi, Indian Institute of Management, Calcutta, Kolkata, India
ISSN/ISBN - 978-146732620-9
DOI - 10.1109/CODEC.2012.6509242
URI: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84877768411&doi=10.1109%2fCODEC.2012.6509242&partnerID=40&md5=44b28a4661fa31765228bfd9750ce25c
https://ir.iimcal.ac.in:8443/jspui/handle/123456789/1564
Appears in Collections:Management Information Systems

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