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DC Field | Value | Language |
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dc.contributor.author | Kanungo, Sayan | |
dc.contributor.author | Rahaman, Hafizur | |
dc.contributor.author | Gupta, Partha Sarathi | |
dc.contributor.author | Dasgupta, Partha Sarathi | |
dc.date.accessioned | 2021-08-26T06:23:37Z | - |
dc.date.available | 2021-08-26T06:23:37Z | - |
dc.date.issued | 2012 | |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84877768411&doi=10.1109%2fCODEC.2012.6509242&partnerID=40&md5=44b28a4661fa31765228bfd9750ce25c | |
dc.identifier.uri | https://ir.iimcal.ac.in:8443/jspui/handle/123456789/1564 | - |
dc.description | Kanungo, Sayan, School of VLSI Technology, Bengal Engineering and Science University, Howrah, India; Rahaman, Hafizur, School of VLSI Technology, Bengal Engineering and Science University, Howrah, India; Gupta, Partha Sarathi, School of VLSI Technology, Bengal Engineering and Science University, Howrah, India; Dasgupta, Partha Sarathi, Indian Institute of Management, Calcutta, Kolkata, India | |
dc.description | ISSN/ISBN - 978-146732620-9 | |
dc.description | DOI - 10.1109/CODEC.2012.6509242 | |
dc.description.abstract | This work presents an extensive simulation study on different design parameters of an Extended Source Ultra Thin Body Double-Gated Tunneling Field Effect Transistor structure. The study investigates the effects of different device design parameter variations on electrical parameters like: sub-threshold swing, trans-conductance, ON-state current and OFF-state current. Finally an optimum structure for Extended Source Ultra Thin Body Double-Gated Tunneling Field Effect Transistor has been derived from the simulation study, with encouraging results for parameters of interest. © 2012 IEEE. | |
dc.publisher | SCOPUS | |
dc.publisher | CODEC 2012 - 5th International Conference on Computers and Devices for Communication | |
dc.subject | BTBT | |
dc.subject | Sub-threshold Swing | |
dc.subject | TCAD | |
dc.subject | TFET | |
dc.subject | Trans-Conductance | |
dc.title | A detail simulation study on Extended Source Ultra-Thin Body Double-Gated Tunnel FET | |
dc.type | Conference Paper | |
Appears in Collections: | Management Information Systems |
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