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Please use this identifier to cite or link to this item: https://ir.iimcal.ac.in:8443/jspui/handle/123456789/1563
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dc.contributor.authorKanungo, Sayan
dc.contributor.authorRahaman, Hafizur
dc.contributor.authorGupta, Partha Sarathi
dc.contributor.authorDasgupta, Partha Sarathi
dc.date.accessioned2021-08-26T06:23:37Z-
dc.date.available2021-08-26T06:23:37Z-
dc.date.issued2012
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84877783600&doi=10.1109%2fCODEC.2012.6509256&partnerID=40&md5=10fbf676a3b019c66de3077ab31b2a00
dc.identifier.urihttps://ir.iimcal.ac.in:8443/jspui/handle/123456789/1563-
dc.descriptionKanungo, Sayan, School of VLSI Technology, Bengal Engineering and Science University, Howrah, India; Rahaman, Hafizur, School of VLSI Technology, Bengal Engineering and Science University, Howrah, India; Gupta, Partha Sarathi, School of VLSI Technology, Bengal Engineering and Science University, Howrah, India; Dasgupta, Partha Sarathi, Indian Institute of Management, Calcutta, Kolkata, India
dc.descriptionISSN/ISBN - 978-146732620-9
dc.descriptionDOI - 10.1109/CODEC.2012.6509256
dc.description.abstractAn analytical model for the 2D potential distribution in sub-threshold regime of operation of a SOI TFET structure under the assumption of a sinusoidal potential distribution in the direction perpendicular to the gate in the middle portion of the channel is developed. Role of any charge on the channel potential is neglected. The model predicts the transfer characteristics of the device with reasonable accuracy. © 2012 IEEE.
dc.publisherSCOPUS
dc.publisherCODEC 2012 - 5th International Conference on Computers and Devices for Communication
dc.subjectBand to band tunneling
dc.subjectSOI-TFET
dc.subjectSub-threshold Swing
dc.subjectTCAD
dc.titleA simple analytical model of silicon on insulator tunnel FET
dc.typeConference Paper
Appears in Collections:Management Information Systems

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