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|Title:||A simple analytical model of silicon on insulator tunnel FET|
Gupta, Partha Sarathi
Dasgupta, Partha Sarathi
|Keywords:||Band to band tunneling|
CODEC 2012 - 5th International Conference on Computers and Devices for Communication
|Abstract:||An analytical model for the 2D potential distribution in sub-threshold regime of operation of a SOI TFET structure under the assumption of a sinusoidal potential distribution in the direction perpendicular to the gate in the middle portion of the channel is developed. Role of any charge on the channel potential is neglected. The model predicts the transfer characteristics of the device with reasonable accuracy. © 2012 IEEE.|
|Description:||Kanungo, Sayan, School of VLSI Technology, Bengal Engineering and Science University, Howrah, India; Rahaman, Hafizur, School of VLSI Technology, Bengal Engineering and Science University, Howrah, India; Gupta, Partha Sarathi, School of VLSI Technology, Bengal Engineering and Science University, Howrah, India; Dasgupta, Partha Sarathi, Indian Institute of Management, Calcutta, Kolkata, India|
ISSN/ISBN - 978-146732620-9
DOI - 10.1109/CODEC.2012.6509256
|Appears in Collections:||Management Information Systems|
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