A simple analytical model of silicon on insulator tunnel FET

Please use this identifier to cite or link to this item: https://ir.iimcal.ac.in:8443/jspui/handle/123456789/1563

Title:	A simple analytical model of silicon on insulator tunnel FET
Authors:	Kanungo, Sayan Rahaman, Hafizur Gupta, Partha Sarathi Dasgupta, Partha Sarathi
Keywords:	Band to band tunneling SOI-TFET Sub-threshold Swing TCAD
Issue Date:	2012
Publisher:	SCOPUS CODEC 2012 - 5th International Conference on Computers and Devices for Communication
Abstract:	An analytical model for the 2D potential distribution in sub-threshold regime of operation of a SOI TFET structure under the assumption of a sinusoidal potential distribution in the direction perpendicular to the gate in the middle portion of the channel is developed. Role of any charge on the channel potential is neglected. The model predicts the transfer characteristics of the device with reasonable accuracy. © 2012 IEEE.
Description:	Kanungo, Sayan, School of VLSI Technology, Bengal Engineering and Science University, Howrah, India; Rahaman, Hafizur, School of VLSI Technology, Bengal Engineering and Science University, Howrah, India; Gupta, Partha Sarathi, School of VLSI Technology, Bengal Engineering and Science University, Howrah, India; Dasgupta, Partha Sarathi, Indian Institute of Management, Calcutta, Kolkata, India ISSN/ISBN - 978-146732620-9 DOI - 10.1109/CODEC.2012.6509256
URI:	https://www.scopus.com/inward/record.uri?eid=2-s2.0-84877783600&doi=10.1109%2fCODEC.2012.6509256&partnerID=40&md5=10fbf676a3b019c66de3077ab31b2a00 https://ir.iimcal.ac.in:8443/jspui/handle/123456789/1563
Appears in Collections:	Management Information Systems

Files in This Item:

There are no files associated with this item.